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Instabilities in MOS-based devices with various substrates ranging from Si, SiGe, IIIV to 2D channel materials, can be explained by defect levels in the dielectrics and non-radiative multi-phonon (NMP) barriers. However, recent results obtained on single defects have demonstrated that they can show a highly complex behaviour since they can transform between various states. As a consequence, detailed...
A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A...
We propose and verify a model for hot carrier degradation based on the exhaustive evaluation of the energy distribution function for charge carriers in the channel by means of a full-band Monte-Carlo device simulator. This approach allows us to capture the interplay between “hot” and “colder” electrons and their contribution to the damage build-up. In fact, particles characterized by higher energy...
Using a physics-based model for hot-carrier degradation we analyze the worst-case conditions for long-channel transistors of two types: a relatively low voltage n-MOSFET and a high-voltage p-LDMOS. The key issue in the hot-carrier degradation model is the information about the carrier energetical distribution function which allows us to assess the carrier acceleration integral determining the interface...
We have developed a two-dimensional non-parabolic macroscopic transport model up to the sixth order. To model higher-order transport parameters with as few simplifying assumptions as possible, we apply an extraction technique from Subband Monte Carlo simulations followed by an interpolation within these Monte Carlo tables through the whole inversion layer. The impact of surface-roughness scattering...
The most accurate way to describe carrier transport is to solve the Boltzmann transport equation (BTE), for instance with the very time consuming Monte-Carlo (MC) technique. On an engineering level however macroscopic transport models are more efficient. Multiplication of the BTE with weight functions, approximation of the scattering integral with a macroscopic relaxation time and integration over...
Coherent transport in mesoscopic devices is well described by the Schrodinger equation supplemented by open boundary conditions. When electronic devices are operated at room temperature, however, a realistic device model needs to include carrier scattering. In this work the kinetic equation for the Wigner function is employed as a model for quantum transport. Carrier scattering is treated in an approximate...
An analytical model for the low-field bulk electron mobility tensor in strained germanium is presented. The model includes the effects of strain-induced splitting of the conduction band valleys in germanium and the corresponding inter-valley scattering reduction as well as temperature and doping dependence. Bulk mobility values larger than 2.5 times the strained silicon values has been predicted....
Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high electric fields has been proposed. The model is intended for implementation in drift-diffusion based device simulators
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