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Chemical mechanical polishing (CMP) performance influence the reliability of TSV process, because the wafer chip-to-chip vertical interconnections for the next process request the TSV wafer a flat surface without defects after CMP. The influence of ECD process to the CMP defects, further to the via-filling effect, was investigated. Thickness uniformity, top surface morphology and the grain orientation...
A hierarchically structured Cu-Ni-P film fabricated via one-step route of electroless plating is reported. The morphology of deposits can be controlled by adjusting the additive in electrolyte. Due to the synergistic crystalline modification of polyethylene glycol (PEG), Janus Green B (JGB) and Cl−, the as-prepared Cu-Ni-P film exhibits pine-like architecture, about 2 µm in height and 1.5µm in root...
The rapid development of three dimensional packaging makes it necessary to develop smaller and more reliable microbumps. In the electrodeposition process of bump cylinder, the filling quality is largely determined by the combination of additives. In this work, the effect and competitive adsorption between suppressor polyethylene glycol (PEG) and accelerator Bis-(3-sodiumsulfopropyl disulfide) (SPS)...
In three-dimensional integration technology, through-silicon vias(TSV) are potential to meet the demand for a higher packing density. Copper filling makes up nearly 40% of the overall TSV cost. To achieve the superconformal mode in TSV copper filling, additives are added to the electroplating bath. Porous Au electrode is prepared by geometric replica of the Nickel microcone arrays. Holes with a diameter...
In this paper, we derive closed-form expressions for the maximum squared correlation (MSC), total asymptotic efficiency (TAE), and sum capacity (Csum) of minimum total squared correlation (TSC) quaternary signature sets. While TSC, MSC, TAE, and Csum are equivalent optimization metrics over the real/complex field, our developments show that such equivalence does not hold, in general, over the quaternary...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
The kinetics which explained the copper Superfilling by electrodeposition was investigated since the copper electrodeposition became the standard technique for TSV. In order to interpret the bottom-up Superfilling process conveniently and exactly, a numerical model focused on the mass which can make the copper deposition in the via is built. This model only considered the effect of accelerator and...
TSV (Through Silicon Via) is an enabling technology for 3D WLP (Wafer Level Packaging) and 3D integration. TSV is a very hot topic for semiconductor industry today. One of the key processes for TSV is the electroplating process. The quality and rate of electroplating are two critical parameters for TSV filling, which can be significantly improved by Bottom-Up filling with much thinner overburden....
The kinetics which explained the Copper Super-filling by electrodepostition was investigated since the copper deposition became the standard technique for TSV. A simple numerical model is built to explain the copper deposition process. Consider with the effect of the accelerator, a linear equation is built to explain the relationship between the exchange current density and the coverage of accelerator...
Pretreatments have a great effect on the through silicon via (TSV) copper electroplating filling process. In this study, we compared the wetting effect by observing cross-sectional images of samples pretreated with ultrasound and vacuuming method. And the electrochemical test was used to verify the effect of acid plating solution on the oxidation of the Cu seed layer. Without any pretreatment, vias...
Accelerator consumption was analyzed by electrochemical method. As the presence of SPS and PEG in the acidic cupric sulfate solution with chloride ions, the cathodic polarization curves become have peaks and valleys. The peak and valley have a strong association with the additive concentration and are associated with the electroplating process. The effect of electroplating time on the cathodic polarization...
In TSV copper electroplating, the goal is to achieve superfilling deposition. In order to reach the bottom-up in TSV copper electroplating, some additives (accelerator suppressor and leveler) are added into the electroplating bath. To know the relationship between additives in the plating solution is very important. In the present work, by means of linear sweep voltammetry (LSV) and cyclic voltammogram...
Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction...
Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of the via is substantially higher. The effect of current density and bath's organic additives on internal stress of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray...
There are many factors which will affect the final result of TSV filling, such as ratio of the additives including accelerator, suppresser, leveler and so on. Complicated environment is also hard to control exactly. If we want to form the “bottom up” in the plating, there must be comprehensively consideration of all factors. Many studies have focused on the effect of additives on the plating uniformity...
Through silicon via technology is one of the critical and enabling technologies for 3D packaging. 300 mum deep vias with a diameter of 50 mum were filled by copper electroplating with CuSO4 and H2SO4 as base electrolyte. Chloride ions, accelerator and leveler were added. The effect of leveler concentration on filling performance was studied. Electrochemical measurements were used to investigate the...
Deep via filling is one of key technologies of 3D packaging. Vias are commonly filled by electroplating. Since cupric transportation in vias is limited by diffusion, Current density is one of the most influential factors for copper plating in vias. We investigated new additive of accelerator, suppressor and leveler. Simulation of the competitive adsorption ability of accelerator and suppressor at...
Copper electrodeposition in acidic cupric methanesulfonate bath with organic additives is discussed in this paper. The influence of poly(ethylene glycol) (PEG) and bis-(3-sodiumsulfopropyl disulfide) (SPS) on copper deposition were studied by means of linear sweep voltammetry, cyclic voltammetry and chronoamperometry. These electrochemical analysises revealed a competition of PEG and SPS on electrode...
In this paper, a novel low-temperature micro-insert bonding technology for 3D package has been reported. Nickel microcone arrays (MCA) fabricated on the bonding pad was used as the under bump metallization (UBM). The bonding temperature is below the melting point of the solder. At certain temperature and pressure, the MCA inserted into the lead-free Sn-Ag-Cu solder bumps to achieve a good adhesion...
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