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HEVC (high efficiency video coding), as the latest video coding standard, is more efficient than H.264/AVC, nevertheless it also brings in a very high computational complexity. To reduce the time of CU (coding unit) splitting or PU (prediction unit) mode deciding, a fast algorithm based on ANN (artificial neural network) and texture analysis is proposed in this paper. First, we acquire and then label...
The most commonly used grounding materials in China are galvanized steel, copper and copper clad steel. The effect of grounding material corrosion on the reliability of electronic equipment is of growing importance as the growing of power capacity. For better understanding the factors influencing the protective effects against corrosion by zinc and copper coatings, two experiments have been performed...
There have been concerns about how far the floating gate based non-volatile flash memory (NVM) can be extended and what will become the future directions of memory development. Several emerging new memories, including magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM) and resistance random access memory (RRAM), were studied as...
Voltage driving is a commonly used method to program the resistive switching memory. However, a question of whether voltage driving or current driving is preferred has never been answered. For periphery circuit design, one should first consider which kind of source should be adopted. In this work, we systematically evaluated the performance of Cu/HfO2/Pt memory device by using current sweeping or...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
The temporal evolution and morphology of three-dimensional (3-D) grain growth in Cu interconnect are simulated by phase-field model techniques. In the simulation, a new local free energy density function is proposed in which the field variables can be reduced from 200 to 20. By restraining the grain orientations in the side face of interconnect, the model is applicable to simulating the microstructure...
130 wet deposition events were observed at the summit of Mt. Tai (East China, 1534 a.s.l) in China during Jan. 2005 to Dec. 2008. Zn, Al, Mn, Fe, Pb, Cu, Ni, Cr, As, and Cd were determined by ICP-MS to evaluate the characteristics of heavy metals in wet deposition at Mt. Tai region. The concentrations of these metals are generally higher at Mt. Tai than the concentrations observed at other monitoring...
The copper interconnect comes into nanometers with the scaling down of device dimension. At the same time, the resistivity is increasing and the characteristic gets worse. In our paper, an optimal aspect ratio (AR) for Cu-line is found by Monte-Carlo (MC) method so that we can get the optimized electric conductivity and improve the performance of interconnection.
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