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We report a novel thin-film flip-chip (TF-FC) c-plane GaN LED design grown on bulk GaN. By way of a photoelectrochemical (PEC) undercut etch, LEDs are transferred from a bulk GaN substrate to a sapphire submount. As a first demonstration, the resulting LEDs have threshold voltages below 3V and a peak external quantum efficiency (EQE) of 8.4% at a wavelength of 471 nm. These results are of LEDs without...
We report a novel, reliable, and scalable technique for the surface nanostructuring of GaN by colloidal lithography. Moth-eye protuberances of varying dimensions have been formed on bulk GaN substrates and on samples containing an InGaN multiple-quantum-well active layer, grown by metal organic chemical vapor deposition. Angle-resolved optical characterization and photoluminescence (PL) indicates...
Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE growth techniques to produce GaN tunnel junction devices with a total device series resistance as low as 1.5 × 10−4 Ω cm2. III-Nitride edge emitting lasers...
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