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We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells.
We achieved a −3dB modulation bandwidth of 1GHz with an ultra-low capacitance of < 1pF in a 419nm vertical-cavity surface-emitting lasers (VCSEL). The VCSEL is based on nonpolar InGaN/GaN quantum-wells and a tunnel-junction intracavity contact.
This is a report of recent progress on GaN-based vertical-cavity surface-emitting lasers (VCSELs). Ion implanted aperture VCSELs with tunnel junction intracavity contacts outperformed dielectric apertures with indium tin oxide intracavity contacts. A novel buried tunnel junction design offers a solution for current and optical confinement.
Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE growth techniques to produce GaN tunnel junction devices with a total device series resistance as low as 1.5 × 10−4 Ω cm2. III-Nitride edge emitting lasers...
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