The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells.
This is a report of recent progress on GaN-based vertical-cavity surface-emitting lasers (VCSELs). Ion implanted aperture VCSELs with tunnel junction intracavity contacts outperformed dielectric apertures with indium tin oxide intracavity contacts. A novel buried tunnel junction design offers a solution for current and optical confinement.
Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE growth techniques to produce GaN tunnel junction devices with a total device series resistance as low as 1.5 × 10−4 Ω cm2. III-Nitride edge emitting lasers...
In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274nm were grown on top of...
Photonic crystals in nature give rise to structural colors in a wide variety of organisms. We combine intriguing biological photonic structures, taken from weevils, with sol–gel templating to create a pallet of robust silica and titania replicas. Structural and optical characterization results are used to calculate band diagrams and density of optical states distributions, revealing that these replicas...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.