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Multi-patterning technology using 193nm immersion lithography has been used since the 22nm logic node generation and it appears that it will continue to be used as far as the 14nm generation. At the same time, the industry trend is to simplify pattern design and reduce complexity in lithography though single directional (1D) layout[1]. On the other hand, there is increasing concern about pattern placement...
We describe a Bragg grating with phase shift section, chirp or super-structure grating scheme that converts the input polarization to orthogonal polarization. A very narrow polarization independent wavelength peak can be generated by phase shift structures and multiple diffraction peaks by sampled or super-structure gratings. Polarization independent flat-top response was obtained experimentally by...
We report polarization independent Bragg grating wavelength filter using polarization conversion. A rib waveguide, air clad or non-vertical waveguide sidewall and asymmetric grating structure can be used to generate the polarization rotation.
We report wavelength filter for fiber to the home system using multiple interferometers to synthesize the desired wavelength response. Each device is designed to be polarization independent. The MMI and Mach-Zehnder type devices were tested.
We report the Si wire AWG without systematic phase error generated at the curved waveguides. A 200GHz spacing 16 channel devices were fabricated by ArF immersion and EB lithography and the results are compared.
A waveguide with slanted sidewall is used to convert the fundamental TM mode to 1st order TE mode. The fundamental TE mode is unchanged. The two polarizations are converted to different order modes with the same polarization. Polarization independent wavelength filtering can be attained using this mode converter with AWG or devices which operates only for the TE mode.
We report the Mach-Zehnder interferometer wavelength filter using multiple Si wire waveguide structure sections. The property of the phase shift or interference conditions can be designed to attain many types of functionality. The polarization insensitive device was obtained in the experiment. The polarization beam splitting can also be achieved by dedicated design procedure.
We report wavelength filter using coupled Si waveguides and its high order mode. The wavelength dispersion difference between modes can be used to construct an add/drop wavelength filter. Devices incorporating reflective mode conversion grating and slot/twin waveguide are reported.
We report the design of the Mach-Zehnder interferometer wavelength filter using multiple Si waveguide structure sections. Tolerance to width error, temperature shift and polarization independence can be attained.
We report the design for the polarization independent Mach-Zehnder interferometer wavelength filter using sub-micron Si waveguide. The same waveguide cross sections can be used for the directional coupler and phase shifter. A high refractive index upper cladding structure enables an easy integration of the filter device and spot size converter. Optimized ridge waveguide also shows polarization independence.
We report a compact wavelength demultiplexer design for widely separated wavelengths used in ONU. The Mach-Zehnder lattice interferometeric filter structure is chosen. The large wavelength dispersion of the Si wire waveguide requires special design considerations.
This paper investigates novel shrink processes and double patterning techniques as a means to enhancing resolution of water based optical immersion lithography. This paper also demonstrates single and double patterning solutions in conjunction with shrink processes for 32 and 22 nm technologies, respectively.
Gain-coupled (GC)-DFB-LD tolerant to optical feedback was developed for low-cost, isolator-free optical subassembly module. GC-DFB-LD into isolator-free micro-BOSA module has power penalty less than 0.3 dB after 25 km transmissions at 1.25 Gb/s with -15 dB optical feedback.
Broad-band wavelength tuning over 60 nm was successfully achieved in monolithic 40 GHz actively mode-locked laser diode with external CW light injection, remaining short pulse width (< 4 ps), low timing jitter of 0.18 ps, and low RIN value (< -130 dB/Hz).
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