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In this research, we reduced plasma damages on GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The plasma damages which are induced during dry etching process are one of the causes of decreasing device performances. The NB is almost electrically uncharged and has few UV photons, thus it can reduce plasma damages on the GaN surface. We applied NB etching...
The Power Added Efficiency (PAE) of amplifiers operated in wave bands, such as 60 GHz, is still under 30%. A switching type amplifier consisting of ultrahigh-frequency transistors is a promising way to improve PAE. Therefore we proposed 60-GHz-band class-F amplifier with InGaAs-based high electron mobility transistors (HEMTs). In such high frequencies, the parasitic delay time is the main cause of...
We propose InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric chirped dual-grating-gate structure which greatly enhances plasmon instabilities. The fabricated device demonstrates an intense stimulated emission of terahertz monochromatic radiation at cryogenic temperatures for the first time.
We report an impact of the stem height of T-gate electrodes on the parasitic gate delay time in InGaAs high electron mobility transistors (HEMTs). Since T-gates with higher stem height make the parasitic gate capacitance smaller, the higher stem height is expected to minimize the parasitic gate delay. However, a systematic study using the devices with different height in the stems of T-gates reveals...
We demonstrate an intense stimulated emission of 0.1–1-μW terahertz (THz) monochromatic radiation in InP-based asymmetric chirped dual-grating-gate (AC-DGG) high electron mobility transistors (HEMTs) at 140–290K. In the research of modern THz electronics, development of compact, tunable and coherent sources operating in the THz regime is one of the hottest issues. Hydrodynamic nonlinearities of two-dimensional...
We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III–V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor...
We designed and fabricated InP-based high electron mobility transistors featuring an asymmetric chirped dual-grating-gate structure with a resonant-enhanced photonic vertical cavity. The device structure greatly enhances the Doppler-effect-driven plasma instability, resulting in intense monochromatic superradiant terahertz emission at 3.55 THz at 140K for the first time.
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