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Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
This paper presents signal integrity analysis of a high-performance processor package with silicon interposer. Thediewas attached on the top side of the siliconinterposer with through silicon vias (TSVs), and theinterposer was connected to the organic substrate. The signal transmission path of this package consists of two redistribution layers (RDLs), TSVson interposer, and wirings on the substrate...
TSV (through-silicon-via) has been regarded as a key technology for 2.5D and 3D electronic packaging. However, the manufacturing of the through silicon interposer (TSI) is very challenging and costly. The minimization of the warpage of the TSV interposer wafer is crucial for successful subsequent processing, for example, thin wafer handling, backside via revealing and copper pillar bumping. In this...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
This paper presents signal integrity analysis of a high-performance processor package with silicon interposer. Thediewas attached on the top side of the siliconinterposer with through silicon vias (TSVs), and theinterposer was connected to the organic substrate. The signal transmission path of this package consists of two redistribution layers (RDLs), TSVson interposer, and wirings on the substrate...
TSV (Through Silicon Via) is regarded as the key enabling technology for 2.5D and 3D IC packaging solution. Si interposers with TSV have emerged as an excellent solution providing high wiring density interconnection, minimizing CTE mismatch to the Cu/low-k chip that is vulnerable to thermo-mechanical stresses, improving electrical performance and decreasing power consumption due to shorter interconnection...
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