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We have developed the epitaxial growth technology of Ge1−xSnx and related group-IV materials. The crystalline properties and energy band structure have been investigated for integrating group-IV semiconductors into Si ULSI platform.
We achieved the world's first epitaxial growth of a Ge1−x−ySnxCy layer, and investigated the effect of Sn incorporation on the growth of Ge1−xCx. Sn incorporation can decrease the epitaxial temperature of Ge1−xCx layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge1−x−ySnxCy layer is expected to realize the energy band engineering independently on the lattice parameter...
We investigated the crystalline structure of Ge1−x−ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1−x−ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1−x−ySixSny layer even with small misfit strain.
An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NBT) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reduction models. The developed models are incorporated into a compact MOSFET model so that we can directly link the...
An accurate circuit performance prediction model and a device lifetime prediction method of negative bias temperature (NBT) stressed devices are proposed in this paper. The proposed model is constituted of a threshold voltage (Vth) shift and a drain current (ID ) reduction. The models can directly link the electrical characteristics degradation to the circuit simulation, thus enable us to design highly...
The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the...
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