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We examine graphene for interconnects within a 7-nm FinFET technology. Multiple scenarios considered alter dimensions and/or materials to reflect realistic graphene interconnect fabrication. Replacement is restricted up to the 3rd BEOL metal layer (M3) as graphene is advantageous over copper in terms of resistivity only for line widths < 30 nm. Initial standard-cell level analysis is extended to...
Though much excitement surrounds two-dimensional (2D) beyond CMOS fabrics like graphene and MoS2, most efforts have focused on individual devices, with few high-level implementations. Here we present the first graphene-based dot-product nanofunction (GDOT) using a mixed-signal architecture. Dot product kernels are essential for emerging image processing and neuromorphic computing applications, where...
Transistors based on atomically thin two-dimensional (2D) materials like MoS2 have attractive properties for applications in low-power electronics. However, in practice their electrical measurements often exhibit hysteresis [1,2], masking their intrinsic behavior. Here, we use pulsed measurements to decrease hysteresis, examine charge trapping, and extract device parameters (like mobility) that represent...
Novel solar cells, based on dense arrays of InGaAs nanowires, are grown directly on graphene. Here, graphene serves as the conductive back contact and growth template for van der Waals epitaxial assembly of vertical nanowires. Although far from being the optimum material, core‐shell p–n junction In0.25Ga0.75As nanowire arrays demonstrate a conversion efficiency of 2.51%, representing a new record...
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