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Transistors based on atomically thin two-dimensional (2D) materials like MoS2 have attractive properties for applications in low-power electronics. However, in practice their electrical measurements often exhibit hysteresis [1,2], masking their intrinsic behavior. Here, we use pulsed measurements to decrease hysteresis, examine charge trapping, and extract device parameters (like mobility) that represent...
Monolayer (1L) two-dimensional (2D) semiconductors such as MoS2 have garnered attention for highly scaled optoelectronics [1,2], due to their sub-nm thickness and direct band gap. For practical applications, such films must be grown on large areas with good electrical properties. However, the highest reported mobility values of 1L MoS2 grown by chemical vapor deposition (CVD) to date have been below...
Two-dimensional (2D) materials such as MoS2 hold promise for both the continuation of conventional Moore scaling and new emerging applications such as flexible and transparent electronics. MoS2 is attractive for digital components [1,2] because it has an intrinsic band gap comparable to that of silicon. M0S2 transistors have already been shown to have a reasonable mobility and excellent on-off ratios...
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