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One of the major area of interest of the electronics packaging industry is the formation of interconnects between the chips in a 3D package. Copper has been proven to be a suitable candidate for the conductive material in back-end-of-line due to its low electrical resistivity and high electro-migration resistance. Due to this favorable property of copper, it is also used to form microbumps and through...
This papers reports on the study of two wafer level underfills (WLUF) for 3D stacked IC applications. WLUF either as a liquid (material A) or a dry-film (material B) were applied at wafer level before singulation and stacking in a die to die configuration using a thermo-compression bonding (TCB) process. The materials were applied on the top die on Cu/Sn microbumps 8.5μm thick to reach a film thickness...
With the emergence of 3D technology to answer the challenging limits of Moore's Law, certain features in today's 3D IC packages have to be adopted in order to meet the reliability and robustness of this technology. The barriers used for TSV processing, the metallurgy of the μbump, the underfill material used in stacking in combination with the IC assembly materials all play a vital role in the reliability...
In 3D IC technology, temporary bonding systems and stacking/assembly process are identified as critical elements given all the concerns on wafer handling amidst BEOL processes and how to do the stacking as best as one could in so many different schemes. In between the temporary bonding systems and stacking/assembly process, is a group and series of processes that link the two. This is collectively...
The demands and challenges in pushing the limits of Moore's Law made the 3D IC stacking radiate the pressure for MPTs (materials, processes and tools) in keeping up with the technology. The 3D IC architecture design built around the TSVs, micro-bumps and thinned wafers/dies is the center of the show, of which the MPTs must conform and be viable to be part of the supporting cast. Underfilling's main...
The ever need for more dense 3D integration or increasing number of IOs requires a scaling down of micro bump dimension and pitch. Scaling although adds high requirements on micro bump process technology and stacking accuracy. It is shown that by working on the micro bump sizes, increased stacking accuracy can be achieved. Integration scheme and process parameters need to be carefully tuned to allow...
There are several motivations for moving to 3D IC technology. One of the key factors is performance enhancement which can be achieved by further miniaturization of the IC. As more and more functionality is required on a smaller footprint, 3D stacking is a very valuable solution. The increased use of multi-chip integration schemes that use microbumps, Cu pillars and TSVs introduces however severe requirements...
As the demand for 3D packaging increases, selecting reliable and cost effective materials to be used to build these complex packages has gained a lot of importance. As current IC technology nodes are becoming “Moore-than-Moore” challenging, thus industry and research institutes alike are trying to find ways of addressing this challenge. The integration of new types of underfill materials in 3D stacking...
With the current development of IC technology nodes becoming “Moore-than-Moore” challenging, industry and research institutes such as Imec are increasing their focus to come up with solutions to these challenges. A solution closely followed at the moment is the development of 3D ICs and 3D packaging. In developing these technologies, there are quite a lot of complexities involved. The development...
Further miniaturization of electronic systems by 3D technologies has increased interest in the semiconductors community. Device scaling has become exponentially challenging. One of the challenges for fine pitch Cu/Sn stacking is to obtain high bump uniformity. Enhanced electroplating of microbumps is shown when plating is done after a plasma treatment or descum. The descum conditions influence the...
In this paper, we present a novel methodology using a thermal test chip to characterize the bulk thermal conductivity and the thermal contact resistance of underfill materials in die-die interfaces of 3D stacks for application-realistic test conditions. Since a silicon chip is used, the thermal properties can be extracted for the same material interfaces (finishing of the Si surface) and the same...
This paper reports on a novel temporary 0-level packaging process for MEMS (Micro Electro Mechanical Systems), in particular MEMS for optical applications. In this process protective caps, with a heat decomposable and photo- patternable polymer sealing ring, are placed by flip-chip on the MEMS wafer. The resulting temporary packages are gross leak tight, fulfil the MIL spec for shear testing and respect...
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