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Power device reliability is one of the key challenges of next generation Smart-Power technologies. As a consequence, device performance needs to be optimized accounting for hot-carrier stress degradation issues. To this purpose, numerical simulation tools are commonly used, but the TCAD modeling of performance drifts due to electrical stress is still an open issue. Physics-based analytical models...
An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large , including mobility variations,...
This work presents a theoretical analysis, validated by numerical simulations, of the vertical LOCOS DMOS structure. New analytical models of the specific on-state resistance and breakdown voltage are developed, which improve upon previous models in that an explicit dependence on device geometry and impurity concentration is worked out. The model accounts for the space charge due to the lateral and...
In this work the hot carrier effects in polycrystallinethin-film transistors, mainly related to hot-holes, are analysed by using a two-dimensional device analysis program. The experimental results have been interpreted in terms of formation of trap centers in the gate oxide and interface states. Furthermore, the theoretical analysis of alternate stresses allowed the determination of the extension...
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