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Germanium faces several technological hurdles in replacing silicon and fulfilling its promise as an alternate channel material; namely, low dopant activation, gate stack interface quality, and high contact resistivity for n-Ge. Ab-initio methods could help to address some of these challenges by providing fundamental insight. However, these calculations often tend to be too computationally heavy to...
To study the High-k dielectrics on alternate semiconductor materials for transistors a modeling platform has been developed which implements a faster 1D Schrodinger-Poisson along with trap models. A fitting algorithm is used for the extraction of trap profiles which fits the model capacitance/admittance to the measurements in the least square sense. The extraction is illustrated on a subnanometer...
This work reports multi-VT Ge gate stacks using low energy plasma-assisted doping (PLAD) with N2 for Ge p-FinFET applications. Varying implant dose and energy is used to demonstrate effective TiN work-function tuning over a range of 170 mV from near-midgap to near-valence band edge of Ge without significant impact on gate capacitance (effective oxide thickness (EOT)), interface quality and TiN resistance...
This work reports improved Ge n-channel gate stack performance using HfAlO high-k dielectric versus HfO2. ALD HfAlO high-k results in improved thermal stability for a 400 °C post high-k deposition anneal of gate stacks with thick (8 nm) as well as thin (2 nm) EOT. For thick EOT stacks Al incorporation mainly benefits (10% lower) EOT and interface state density (Dit) whereas for thin EOT stacks the...
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