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Despite the high phase non-linearity of a Silicon Mach-Zehnder Modulator in forward bias, we demonstrate that high third order spur-free dynamic range ~102.8 dB. Hz2/3 can be obtained by optimizing the D.C. bias operating point at 1 GHz.
Fully-integrated photonic microwave tracking generators are demonstrated for the first time. By sweeping the wavelength separation among two-locked DFBs and one tunable laser, a two-tone photo-generated RF signal with tunable difference in frequency can be generated. 2017 Optical Society of America
A novel piezoelectric actuator is fabricated on a suspended silicon nitride ring resonator to tune the optical resonance via mechanical deformation. Fabricated devices exhibit tuning across a full free spectral range by applying 16 V across the piezoelectric.
An on-wafer and self-calibrated scheme is proposed and demonstrated for self-referenced microwave characterization of a silicon integrated optical transceiver. The proposed self-calibration method enables on-wafer selective extraction of microwave characteristic parameters of high-speed modulators and photodiodes in the integrated optical transceiver, without the need for extra electrical-to-optical...
High quality sources of single and identical (indistinguishable) photons are essential for photonic quantum information processing including boson sampling, cluster-state quantum computing, and optical quantum repeaters. To enable the use of several single photon sources in parallel and to allow the implementation of complex photonic networks, it is essential that the single photon source can be integrated...
By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-to-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.
By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μΑ at −2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.
Carrier lifetime limited bandwidth in proposed III-Nitride LED is relaxed with further improvement in its internal quantum efficiency. Moderate output power (1.7mW) with record-high 3-dB electrical-to-optical bandwidth (1GHz) among all reported visible LEDs is demonstrated.
We demonstrate InP based evanescently-coupled p-i-n photodiodes heterogeneously integrated onto silicon-on-insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520–1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).
An approach for a low-power chip-scale package is described, that provides a laser output with a programmable frequency across 50 nm of bandwidth centered at 1550 nm, and a resolution of one part in 1014.
The gain-current relationships for quantum-dot and quantum-well lasers are compared experimentally and theoretically. Rigorous treatment of collision effects using quantum-kinetic equations improves precision in determination of extrinsic parameters and prediction of performance.
We fabricated an optical interferometric gyroscope front-end with a tunable laser on the heterogeneous silicon platform. We successfully demonstrated a laser based gyroscope with low noise floor comparable to a commercial ASE based gyroscope.
We show theoretical and experimental results from a tunable laser, with its center wavelength in the C-band, designed using coupled-ring resonator mirrors. The effective cavity length enhancement and negative optical feedback obtained from the resonators helps to narrow the laser linewidth in a small form factor. We report a linewidth of 160 kHz and a side-mode suppression ratio of $>$ 40 dB over...
Combining quantum well intermixing and multiple die bonding a broadband superluminescent III-V on silicon LED was realized. Balancing four LEDs with different band gaps resulted in 292nm 3dB bandwidth and an on-chip power of −8dBm.
We investigate athermal characteristics of silicon waveguides clad with TiO2. The measured ring resonance wavelengths near 1.3 μm over 20–50°C exhibit second-order thermo-optical effects and spectral dependency, implying second-order effects from TiO2 and Si combination.
We report the first CW room temperature mid-infrared (λ=2.0μm) laser heterogeneously integrated on silicon. Molecular (polymer-free) wafer bonding of InP to Si is employed. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. Polished Si facets form a Fabry-Pérot laser cavity.
We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.
In large-scale digital systems, propagation delay and power consumption of the interconnects are vastly larger than that of the transistors themselves [1,2]. Reduced power consumption, and increased capacity is required for interconnects, whether on-chip, between circuit boards, or within large data centers. Here we will consider coherent optical interconnects for high-capacity, sub-km links within...
We describe recent advances in hybrid silicon components and photonic integrated circuits. We present a path towards scalable, ultralow cost photonic integrated circuits (PICs) on 300 mm silicon substrates.
We demonstrate near-ballistic uni-traveling-carrier photodiodes with record optical-to-electrical bandwidth (325 GHz) under 50Ω loads. By using a flip-chip bonding package, high photocurrent (16 mA) and record-high photo-generated power (−1.8 dBm) at 325 GHz are achieved.
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