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This work provides breakthroughs in key technological modules for high performance and reliable 3D Sequential Integration with intermediate BEOL (iBEOL) in-between tiers. We demonstrate that (i) a high-quality solid phase epitaxy process is possible at 500°C, (ii) TiN native oxide removal prior to poly deposition leads to an improvement in gate stack reliability below 525°C and (iii) state-of-the-art...
Thin film devices (FDSOI) are among the most promising candidates for next device generations due to their better immunity to short channel effects (SCE). In addition, the introduction of high-k and metal gate has greatly improved the MOSFETs performance by reducing the electrical oxide thickness (CET) and gate leakage current. However, if midgap metal gate is sufficient to provide a high symmetrical...
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility...
This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm...
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