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CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium...
3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future development of multi-sensor data fusion in a low-cost chip size system. MEMS/CMOS integration was primarily...
A silicon-on-insulator (SOI) micro-electromechanical system (MEMS) accelerometer, complementary Metal oxide semiconductor (CMOS) readout circuit and simultaneous hermetic encapsulation using low temperature Cu-Cu bonding are investigated for 3D heterogeneous integration of MEMS and CMOS. The MEMS accelerometer is fabricated using bulk micromachining technology. A CMOS-based readout circuit is designed...
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