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In this work, we report a hole mobility of one million in germanium. This extremely high value of 1.1 x 106 cm2V-1s-1 at a carrier sheet density of 3.0 x 1011 cm-2 was observed in a strained Ge quantum well structure grown by reduced-pressure chemical vapor deposition (RP-CVD) and is nearly an order of magnitude higher than previously reported values [1]. Compressively strained Ge offers considerable...
Germanium is a logical supplement to enhance existing semiconductor technologies, as its material behavior is very similar to silicon, and allows new functional devices that cannot be fabricated from silicon alone [1]. Germanium wafers are, however, both expensive and less durable than their silicon counterparts. High quality Ge layers epitaxially grown on a Si(001) substrate can be fully relaxed,...
We present a comprehensive study of hole transport in germanium layers on “virtual” substrates using a full band Monte Carlo simulation approach, considering alternate “virtual” substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with ...
The electrical characteristics of germanium (Ge) pMOSFETs with high-?? dielectric and gate lengths down to 125nm have been studied as a function of temperature down to 77K. The effective hole mobility improves from 235cm2/Vs at room temperature to 490cm2/Vs at 77K due to the reduction of phonon scattering. We report a drive current enhancement of 1001 ??A/??m at 295K to 1394??A/??m at 77K for L =...
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