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In this study, board level drop shock and TC reliabilities in terms of solder materials and UBM (under bump metallurgy) structures have been evaluated to suggest optimal structures of WLP (wafer level packaging) with the large die, high pin counts for mobile application. Test vehicles of WLP have been designed with 5.6??5.6 mm die size, 340 um thickness (including backside protection film), 14??14...
To satisfy the requirements of the newest mobile product, smaller solder ball is needed for electronic packages such as chip scale package (CSP). The purpose of this study was to investigate the effect of solder ball size on the interfacial reaction. In this study, 400, 300, and, 200 ??m diameter solder balls of 98.5 wt.% Sn, 1 wt.% Ag, and 0.5 wt.% Cu(SAC105) were formed on the Cu/OSP and electroplated...
A thick Cu column based double-bump flip-chip structure is one of the promising alternatives for fine pitch flip-chip applications. In this study, the thermal cycling (T/C) reliability of Cu/SnAg double-bump flip-chip assemblies was firstly investigated and the failure mechanism was analyzed through correlation of T/C test and the finite element analysis (FEA) results. In addition, the effect of Cu...
Recently, Sn-Ag-Cu solders have been widely used as lead-free candidates for the Ball-Grid-Array (BGA) interconnection in the microelectronic packaging industry. However, widely used Sn-Ag-Cu solders such as with 3.0-4.0 wt% Ag in microelectronics exhibit significantly poorer drop test reliability than SnPb solder due to the low ductility of Sn-Ag-Cu solder bulk. The brittle failure of solder joints...
In this study, electromigration behaviors of Sn3.0Ag0.5Cu solder flip chip using electroless Ni-P UBM were investigated. From the morphology observation, Ni-Sn intermetallic compounds (IMCs) and Sn were observed at the interface between Al and electroless Ni-P UBM due to movements of Sn atoms against the electron flow. The backward movements of Sn occurred by melting of solder materials. Temperature...
In this study, electromigration behaviors of Sn3.0Ag0.5Cu solder flip chip using electoless Ni-P UBM were investigated. In anode solder joint, UBM was completely depleted and crack was observed. In the top view of consumed UBM, we could observe several holes on Ni-Sn IMC backfilled by Sn. Anode solder joint was disconnected by the large cavity under this consumed UBM. In the in-situ observation, UBM...
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