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In terms of defect generation and redistribution, the electrical forming process and filamentary conduction lead conventional RRAM cells to low yield, high operation current, and large operation variations [1-3]. Recently, emerging RRAM cells based on the redox reaction mechanism were proposed to eliminate electrical forming process [4]. However, the endurance was below few thousands cycles and device...
We investigated on the structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O 3 or H 2 O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron...
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