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This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs)...
This paper examines the effect of block oxide height (HBO) on a self-aligned (SA) source/drain-tied n-shaped block oxide field-effect transistor (S/D-tied nBOFET). According to the simulation results of a two-dimensional (2-D) numerical simulator DESSIS, the height of the block oxide is one of the important parameters for the suppression of short-channel effects (SCEs). Hence, the forming of HBO becomes...
This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating...
For the purpose of performance improvement from bSPIFET (Si on partial insulator with block oxide field-effect transistor) technology [1], a self-aligned bSPIFET was proposed. However, a lot of electrical characteristics have not yet been studied in detail. This paper aims to investigate the device behaviour of self-aligned bSPIFET as a function of misaligned block oxide height. According to the TCAD...
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