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The paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to improve device reliability. S/D-tied BG MOSFET not only effectively reduce the effects of self-heating but also slightly suppress the short-channel effects.
What is silicon-on-insulator (SOI)? Why SOI? Because of the excellent short-channel effects (SCEs) immunity, SOI group is generally considered to be a very strong candidate in the end of the CMOS (complementary metal-oxide semiconductor) scaling, as compared to bulk silicon. This paper aims to propose a novel device architecture namely self-aligned (SA) Pi-shaped source/drain ultra-thin SOI MOS field-effect...
In this work, our main aim is to investigate the effects of source/drain thickness on the characteristics of self-aligned quasi-silicon-on-insulator metal-oxide semiconductor field-effect transistor with pi-shaped semiconductor conductive layer. According to the simulation results, we found that the short-channel characteristics and self-heating are much sensitive to the source/drain thickness. A...
A novel device architecture-the self-aligned pi-shaped source/drain (S/D) ultrathin silicon-on-insulator (UTSOI) FET-is presented for the first time in the field of silicon-on-insulator (SOI) technology; this new device demonstrates how to decrease the self-heating effects in the SOI-based devices. Two-dimensional simulations show that the cost of building an S/D tie into the UTSOI-FET is a modest...
This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-tied scheme, resulting in improved thermal stability. In addition, S/D-tied BG MOSFET not only diminishes...
This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating...
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