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In this paper, we present a highly scaled bulk metal-oxide-semiconductor field-effect transistor with block oxide (BO) and source/drain (S/D)-tied structure that meets the International Technology Roadmap for Semiconductors requirements for high-performance devices. This new device requires only a simple BO fabrication process using SiGe-Si epitaxial growth with selective SiGe removal and requires...
In this paper, novel FinFET device structures with its bodies been connected together have been for the first time proposed by three-dimensional (3-D) simulation. The short-channel characteristics of threshold voltage (VTH), drain induced barrier lowering (DIBL), and on-off ratio current performance have been examined and explained in this paper. Also, the novel structures show the desired characteristic...
This paper proposes a new self-aligned process to form the silicon-on-insulator with block oxide. Based on the TCAD simulation, we have proved that the new process can get excellent short-channel effects immunity compared to the previous process [1]. Also, the new process can overcome the problem of the previous one, which can not be used on the thin BOX devices, so that the application of the block...
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