The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Since recent mobile electronic devices have started to adopt NAND flash memory as their main data storage device, the demand for low cost and high density NAND flash memory has been rapidly increasing. As a promising candidate, nanowire SONOS NAND flash memory array has been introduced and reported for highly scalable device structure. However, since it is hard to bias floating body of memory cells,...
Various types of flash memory devices are fabricated on silicon-on-insulator (SOI) substrate for efficient isolation and higher program efficiency nowadays. Since metal-oxide-semiconductor field effect transistors (MOSFETs) on SOI has a floating body and corresponding effects, it is quite difficult to predict the program efficiency of SOI-based NOR-type flash memory device making use of channel hot...
A novel vertical channel double split-gate (VCDSG) flash memory is investigated. As well as the single-level operation, this device is especially useful for the multi-level cell (MLC) to operate as a 4-bit/cell. Operation and fabrication issues related with the 3-dimensional cell structure are addressed. For high density integration, simple contact array scheme is proposed.
In this study, the negative biasing effects on the interference is investigated as process and operation parameters such as channel doping concentration, channel thickness and magnitude of negative biasing in the read operation. The electrical interference can be termed as paired cell interference (PCI) more specifically, since the two different devices face each other having a common silicon channel...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.