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This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along...
This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Driftdiffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such...
A simulation method for evaluating the performance of CTM with incorporating nanocrystals into the charge trap layer is presented and the effects of bias voltage, charge trap distribution, nanocrystal size, temperature and gate dielectric layer's thickness on program/erase/retention characteristic are studied. It can be a useful tool for designing nanocrystals based CTM.
In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it...
The impact of line-edge roughness (LER) on double-gate (DG) Schottky-barrier field-effect transistors (SBFETs) in the level of device and circuit was investigated by a statistical simulation. The LER sequence is statistically generated by a Fourier analysis of the power spectrum of the Gaussian autocorrelation function. The results show that SBFETs are more sensitive to the LER effect in the high-...
In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs...
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
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