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By comparing electrical data of a wide variety of MOSFETs using a special normalization method, it was revealed that pFET random fluctuations can be mostly explained by RDF, while some additional fluctuation mechanism contributes to nFETs. It is suspected that this difference is caused by the different behavior of the channel impurity species.
A new normalization method of VT variability in terms of dopant depth profile is developed and applied to measured variation data of MOSFETs with four types of channel dopant (B, Sb, P, As) with different depth profiles. The normalized coefficient shows a constant value indicating the validity of the method. However, it is shown that only B has much larger coefficient, suggesting B has some extra...
Extra VT variability sources in NMOS are investigated using Takeuchi plot. It is clearly shown that VT variation of boron channel NMOS cannot be explained solely by the channel depth profiles. Moreover it is clarified that boron TED is the dominant source of the extra NMOS VT variability. By suppressing the effect of boron TED with backward substrate bias, VT variation of boron channel NMOS comes...
Randomness of discrete fixed charges at SiO2/Si interface of NMOS, which is thought to be one of the possible origins of threshold voltage (Vth) variation, is investigated using 3D device simulation. Three cases of fixed charge types are assumed; (i) both negative and positive sheet charges exist with zero net charge (mix charges), (ii) only negative sheet charges exist, and (iii) only positive sheet...
The threshold voltage (Vth) variation in MOSFETs induced by electrical thickness (Tinv) fluctuations due to atomic oxide roughness (AOR) and local gate depletion (LGD) by 3D simulation was demonstrated in this study. It was considered that the impact of Tinv fluctuations on Vth variation is small.
Using 1M DMA-TEG, the analyses of 5sigma Vth fluctuation in 65 nm-MOSFETs were carried out. Physical and electrical analyses confirmed that random dopant fluctuation is dominant though NMOSFET has larger fluctuation as compared with PMOSFET. To explain this phenomenon, a B clustering model is proposed. In the case of clustering with 5 to 6 B atoms in the channel, Vth fluctuation of NMOSFET can be...
We have developed a model to evaluate the impact of local gate depletion on Vth variation. Our model realizes that when a large grain exists in a gate, Vth becomes high, which support the measured data. The sizes (L & W) dependences of Vth distributions due to the local gate depletion are also investigated and the averaging effect works in wide channel MOSFETs. We are going to use this model to...
In recent years, the increase in leakage current in MOSFETs has become a crucial problem. The reduction of leakage is often accompanied by the reduction of drive-current. The back-bias scheme is one of the most promising schemes to realize both low leakage current and high drive-current by using the body effect. The inter-chip variations can also be compensated by the back-bias scheme. On the other...
Random threshold voltage (VM) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes...
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