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This paper describes the integration of a thermally assisted switching magnetic random access memory (TAS-MRAM) in FPGA design. The non-volatility of the latter is achieved through the use of magnetic tunneling junctions (MTJ) in the MRAM cell. A thermally assisted switching scheme is used to write data in the MTJ device, which helps to reduce power consumption during write operation in comparison...
The goal of this paper is to propose an FPGA using emerging non volatile technologies for its configuration memory. Studies on magnetic memories have already been carried out [1] but solid electrolyte and phase change memories are also good candidates for such type of application. Features of these technologies can provide some interesting characteristics to the FPGA such as short writing time with...
This paper describes a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each power up of the device. Each configuration memory point has to...
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