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Design and characterization of a transmitter building block for one-step growth photonic integration, featuring a 1310 - nm laterally coupled distributed-feedback laser with a front-side passive optical waveguide and a back-side optical power monitor, are presented. Formed on a semi-insulating Fe : InP substrate and processed by means of a stepper optical lithography, the device perfectly suits the...
We describe the design and fabrication of a λ/4 phase-shifted laterally-coupled distributed-feedback laser. The third-order grating for distributed-feedback is fabricated without regrowth using stepper lithography, a process that is amenable to high-yield, low-cost manufacturing.
We describe the design and fabrication of a λ/4 phase-shifted laterally-coupled distributed-feedback laser. The third-order grating for distributed-feedback is fabricated without regrowth using stepper lithography, a process that is amenable to high-yield, low-cost manufacturing.
We describe the design and fabrication of a lambda/4 phase-shifted laterally-coupled distributed-feedback laser. The third-order grating for distributed-feedback is fabricated without regrowth using stepper lithography, a process that is amenable to high-yield, low-cost manufacturing.
Integrated photonics technologies are reviewed in application to access network transceivers. Low manufacturing cost and high volume scalability, achievable through monolithic integration by means of semiconductor wafer fabrication techniques, identified as enablers for mass deployment.
The novel hot electron injection laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the potential of carrier heating assisted gain switching to directly modulate the optical field intensity at frequencies up to 100 GHz while maintaining...
A novel monolithically integrated InP-based WDM component for dynamic channel equalization using planar echelle gratings for wavelength (de)multiplexing and waveguide photodetectors - electroabsorptive attenuators for monitoring and adjusting optical power in wavelength channels, is reported.
Carrier heating affect on the operation of a GaInAsP/InP single-frequency laser diode is theoretically studied and numerically simulated. It is shown that fast processes of carrier heating and cooling may be used for a deep modulation in a picosecond time scale.
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