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We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the...
We fabricated 40 Gb/s electroabsorption modulator-integrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3 dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance...
We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through selective-area growth method. The facet reflection was not sufficiently removed by just depositing anti-reflection coating on the as-cleaved facet and low frequency resonance occurred by optical feedback from facet to DFB laser. Tilted facet formed by dry etching processes successfully...
We developed 40 Gb/s traveling wave electroabsorption modulator-integrated DFB laser (TW-EML) modules using several advanced technologies. This 40 Gb/s EML device adopted traveling wave electrode structures and showed the result that the measured 3 dB bandwidth of the electrical-to-optical (E/O) response reached about 45 GHz and the return loss (S11) was kept below -10 dB up to 50 GHz. For the module...
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