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Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 31×31mm large body size is selected to study...
Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required...
As gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonded ball hardness are 34% and 60% higher than that of Au, hence increases the stress on bond pad and chip...
For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch <; 70um and bonded ball diameter <; 58um), more-so on low k wafer technology with bond-over-active requirement...
As gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonded ball hardness are 34% and 60% higher than that of Au, hence increases the stress on bond pad and chip...
Currently, there is a great interest in applying copper material to wire bonding of fine pitch assembly packaging, particularly for cost saving purposes. However, the hardness property of copper is harder compared to the conventional gold wire. The hardness factor of copper, coupled with the work hardening effect of the USG power and force during wire bonding, is a major cause for bond pad crack and...
The purpose of this paper is to discuss the effect of Nickel (Ni) thickness on lead free solder joint material for tape ball grid array (TBGA) application. In this study, four different level of Nickel thickness were chose that is 3 um, 4 um, 5 um and 6 um. Ball pull testing was used to assess the solder joint performance at time zero, after multiple reflow and high temperature storage (HTS). The...
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