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The short length diode with forming cathode static domain and occurring impact ionization are considered. The diode peculiarity is the usage of heterojunction on cathode contact and region with varying composition. The analysis of the diodes operation was performed using Monte Carlo technique. The influence of doping profile on diode current - voltage characteristic is investigated. The carriers concentration...
Diodes, where the static domain is formed under certain conditions in a cathode, are considered. Impact ionization can occur in cathode static domain at high voltages. The occurrence of impact ionization leads to the avalanche-transit effects and creates noise generation. The analysis was performed using Monte Carlo simulation. The advantages of a metal cathode over n + cathode to achieve breakdown...
The planar n+-n-n+ diode with tunnel lateral boundaries based on n-type epitaxial film which is grown on a semi-insulating GaAs substrate is considered. It is shown that having two sites with the tunneling characteristics on the lateral border of the planar diode leads to two areas of negative differential conductance on the current-voltage characteristic of the diode and leads to the generation of...
Multiplication of frequency is considered at impact ionization in transfer electron InN, GaN, AIN diodes. If impact ionization takes place, coefficient of frequency transformation increases and reaches, for example, 40% for second harmonic.
The diode, in which the cathodic static domain is formed under certain conditions, where at the big pressure shock ionization can develop, is considered. Occurrence of shock ionization leads to avalanche transit-time effect and occurrence of noise generation. It is shown below, at what pressure on the GaAs-diode it is possible to get the electric field intensity in such a domain about 200 kV/cm. Comparing...
A double-temperature model of inter-valley electron transfer (IET) is used to study the avalanche effect in graded band gap Alx(z)Ga1-x(z)As diodes with IET. It is demonstrated that the graded band gap crystals enable decrease voltage of avalanche effect in static domain. This effect is useful in noise diodes with static domain and IMPATT diodes.
The design of the thermocouple detector of the microwave radiation on the basis of the semimetal film Bi1-xSbx (x=0.12) has been considered. The expression for the voltage-power sensitive has been obtained and dependence of the differential thermal electromotive for the film Bi1-xSbx via its thickness has been experimentally investigated.
Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained...
A TED with resonance tunnelling cathode have been considered. It is possible to obtain generation in the diode structure at the expense of TEE and cathode negative resistance. Generation conditions for both mechanisms are determined. Oscillation efficiency and frequency limit have been calculated.
Considered in this paper is the operation of InP Gunn diodes with AlxIn1-xAs, GaxIn1-xAs and GaxIn1-xP cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.
In this work the oscillation efficiency of transfer electron diodes with resonance-tunnel cathode (RTC) is investigated by modelling. The processes occurring in active region of the diode and in the areas near RTC are accounted. I-V characteristics and doping profile of the diodes are presented.
This paper studies the basic principle of the appearance and drift space charge waves in transferred electron devices (TEDs) on base A3B5 variband semiconductor compounds. The two-temperature model of the electron intervalley transfer in a variband semiconductor was applied. The operation of the Gunn diodes on base of different threefold semiconductor compounds are investigated.
This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.
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