The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Diodes, where the static domain is formed under certain conditions in a cathode, are considered. Impact ionization can occur in cathode static domain at high voltages. The occurrence of impact ionization leads to the avalanche-transit effects and creates noise generation. The analysis was performed using Monte Carlo simulation. The advantages of a metal cathode over n + cathode to achieve breakdown...
The planar n+-n-n+ diode with tunnel lateral boundaries based on n-type epitaxial film which is grown on a semi-insulating GaAs substrate is considered. It is shown that having two sites with the tunneling characteristics on the lateral border of the planar diode leads to two areas of negative differential conductance on the current-voltage characteristic of the diode and leads to the generation of...
Multiplication of frequency is considered at impact ionization in transfer electron InN, GaN, AIN diodes. If impact ionization takes place, coefficient of frequency transformation increases and reaches, for example, 40% for second harmonic.
A numerical simulation of semiconductor devices is an important information source of physics of processes flowing in them. Modern computers make available the modeling of structures, extraordinarily difficult for an analysis by other methods. For example, researches of operating regimes of Gunn diodes near-critical, for example, with a development of impact ionization in a traveling domain of a strong...
The expressions have been derived for the volt-watt sensitivity of thermoelectric hemispherical metal-semimetal BiSb contact detectors of microwave radiation for two cases of heat emission.
The diode, in which the cathodic static domain is formed under certain conditions, where at the big pressure shock ionization can develop, is considered. Occurrence of shock ionization leads to avalanche transit-time effect and occurrence of noise generation. It is shown below, at what pressure on the GaAs-diode it is possible to get the electric field intensity in such a domain about 200 kV/cm. Comparing...
A double-temperature model of inter-valley electron transfer (IET) is used to study the avalanche effect in graded band gap Alx(z)Ga1-x(z)As diodes with IET. It is demonstrated that the graded band gap crystals enable decrease voltage of avalanche effect in static domain. This effect is useful in noise diodes with static domain and IMPATT diodes.
The design of the thermocouple detector of the microwave radiation on the basis of the semimetal film Bi1-xSbx (x=0.12) has been considered. The expression for the voltage-power sensitive has been obtained and dependence of the differential thermal electromotive for the film Bi1-xSbx via its thickness has been experimentally investigated.
Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained...
A TED with resonance tunnelling cathode have been considered. It is possible to obtain generation in the diode structure at the expense of TEE and cathode negative resistance. Generation conditions for both mechanisms are determined. Oscillation efficiency and frequency limit have been calculated.
Considered in this paper is the operation of InP Gunn diodes with AlxIn1-xAs, GaxIn1-xAs and GaxIn1-xP cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.
The practical application of multigrid algorithms (FMG, FAS, MLAT) for solution of large scale problem, originating at discrete sampling of a set of physical model equations of the Gunn diode, is described.
Microwave radiation detectors on the basis of semimetal B1-xSBx in the frequency band 120-270 GHz for the T = 300 K have been experimentally investigated. Voltage -power sensitivity p = (2-3) V/W has been determined.
Analyzing the results of influence of impact ionization on operation of LSA diodes, possible conclusions were listed. Described LSA diodes on the basis of InN, GaN, AIN compounds have low efficiencies and small permissible overvoltage over threshold and on these factors worst then LSA diodes on the basis of gallium arsenide. For validly of the drift approach for developing impact ionization possible...
The waveguide construction of the broadband GaAs-generator with electronic frequency tuning on a frequency range of 60...70 GHz with output of microwave power on the 2nd harmonic P2 = 10 mW is designed. Electronic tuning of frequency of the broadband GaAs-generator in a frequency range of 60...70 GHz has made 9 GHz.
In this work the oscillation efficiency of transfer electron diodes with resonance-tunnel cathode (RTC) is investigated by modelling. The processes occurring in active region of the diode and in the areas near RTC are accounted. I-V characteristics and doping profile of the diodes are presented.
This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.
The model for numerical simulation of the Gunn diode with electric field strength sufficient for the development of the impact ionization in the moving high-field domains is described and some results are presented. The form of the current oscillations and frequency spectra is in good agreement with experimentally measured data. It is shown that the Gunn diode operating under conditions of the impact...
The approach to build-up of a numerical model of semiconductor devices on basis of the electron transfer effect is offered in view of the impact ionization, providing stability of an iterative process at origin of the considerable excess concentration of generated by the impact ionization charge carriers
Proposed in this paper is the design of numerical model of the semiconductor devices on basis of IET (Intervalley Electron Transition), allowing impact ionization. The approach ensures iterative process stability under conditions of impact ionization
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.