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The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor...
The usage of graded-gap semiconductors can increase the efficiency and output power of Gunn generators. The energy gap between the valleys in InBN and GaBN compounds, unlike other ternary semiconductor nitrides, can be reduced to zero. This gives the opportunity to find the optimal distribution of the BN component in graded gap compounds for Gunn diodes. In this paper we present the results of numerical...
Physical phenomena of the transfer electron effect in Gunn diodes based on the InBN and GaBN graded gap semiconductors. InBN and GaBN diodes output power at the different maintenance of BN was determined. Optimum distribution of the BN binary components is found in the diode. It is shown that graded gap Gunn diodes InBN and GaBN excels InN and GaN in efficiency of generation and output power and graded...
A double-temperature model of inter-valley electron transfer (IET) is used to study the avalanche effect in graded band gap Alx(z)Ga1-x(z)As diodes with IET. It is demonstrated that the graded band gap crystals enable decrease voltage of avalanche effect in static domain. This effect is useful in noise diodes with static domain and IMPATT diodes.
Considered in this paper is the operation of InP Gunn diodes with AlxIn1-xAs, GaxIn1-xAs and GaxIn1-xP cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.
This paper studies the basic principle of the appearance and drift space charge waves in transferred electron devices (TEDs) on base A3B5 variband semiconductor compounds. The two-temperature model of the electron intervalley transfer in a variband semiconductor was applied. The operation of the Gunn diodes on base of different threefold semiconductor compounds are investigated.
A new highly effective Gunn diode is offered. The power and frequency characteristics of Gunn diodes with two active regions (InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As) are calculated. The greatest efficiency /spl sim/14% and flow of target capacity /spl sim/15.5 kW/cm/sup 2/ are received on the diode with blocking metal cathode at frequency /spl sim/55 GHz; the width frequency of a range is...
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