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This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.
The paper shows that a minimum of two traps is required to cause breakdown in SiON films down to 10A. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H0
We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H+ and H0) from the anode during TDDB stress
Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concentration, and fluorine implantation. Incorporation of the material dependence of the diffusivity within...
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E TDDB model controversy that has existed for many years It is shown here that either TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths < 3eV, the bond breakage rate is generally dominated by field-enhanced...
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