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This work introduced a novelty MEMS pyroelectric infrared detector based on LiTaO3 (LT) crystal with high absorptivity amorphous carbon film layer. The LT crystal is thined and polished to 100um thickness and double mentaled for electical connection which will be suspened upon rectangle cave of silicon substrate with mental ring. Amorphous carbon(a-C) could be produced by magnetron sputtering on the...
This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA)...
In conventional control system, crowning growth process has little consideration on controlling the microscopic quality of silicon crystal ingot. Phenomena of diameter fluctuation is observed and analyzed. Based on the cause of diameter fluctuation, a model based predictive control approach is proposed. Generalized Predictive Control (GPC) algorithm is used in the temperature feedforward path of crystal...
Taxi is one of the important transportation for citizens to travel. It is a hot issue of society which attracts people's attention, because it is hard to take a taxi. According to series of problems of hailing taxis and combining present subsidy schemes of various taxi companies in the era of ‘Internet Plus’, we select optimum scheme by using Analytic Hierarchy Process Model and evaluate the extent...
Mining outliers in a heterogeneous information network is a challenging problem: It is even unclear what should be outliers in a large heterogeneous network (e.g., Outliers in the entire bibliographic network consisting of authors, titles, papers and venues). In this study, we propose an interesting class of outliers, query-based sub network outliers: Given a heterogeneous network, a user raises a...
An optimized grating coupler featuring both ultra-broad bandwidth and high-efficiency has been achieved for the first time for the +1 diffraction order at a central operating wavelength 1.55 µm for TM polarization in horizontal slot waveguides. With proper design of the thickness of the groove thickness in grating region, we achieved a 60 nm 1 dB bandwidth, and the 3 dB bandwidth is 92 nm covering...
Fiber to silicon nitride waveguides coupling is achieved using silicon grating coupler with a transition. Two optimized couplers are designed for TE and TM mode excitation, achieving over 55% efficiency. Fabrication issues are also discussed.
Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment...
As the development of electronic devices, three-dimensional (3D) integration is the next generation of electrical packaging technique. Glass is another excellent material for packaging with lots of advantages. In this paper, we introduce novel tungsten filled through glass via wafer, simulated electronic characters and its application on MEMS.
A tunable polarization diversity silicon waveguide based optical filter with fiber assembly was demonstrated. With the polarization diversity scheme, polarization dependent loss (PDL) being less than 0.5 dB was achieved in the silicon optical filter. The insertion loss of the packaged polarization diversity module is ∼13.4 dB. The extinction ratio of the optical filter is about 20 dB, and the tuning...
A silicon heat sink with grooved mirror was fabricated by micro-processing technology, then a 5W blue 2×2 LED array with Silicon-based heat sink was accomplished by way of studying its heat conduction. Firstly, the optical ray trace simulation of the array was carried out to study the relationship between light profile and lens shaped, groove height. Then according to the optical simulation results,...
A glass interposer with through-glass-via (TGV) is desirable for three-dimensional system-in-package (3D SiP) integration in order to implement product miniaturization, high density, high performance and integration of different functional chips with minimal signal propagation delay. Based on microwave transmission line theory and coplanar waveguide (CPW) theory, a finite element, full-wave method...
A polarization diversity circuit in silicon waveguide was developed. The polarization dependent loss is 0.5 dB. The insertion loss from the polarization diversity components is 3 dB. The extinction ratio of the ring circuit is 20 dB.
A 3μm long ultra small surface plasmon polariton effect based TM to TE polarization rotator was designed. Effective polarization rotation was achieved in fabricated devices. 10dB PER and 11dB insertion loss were achieved in experiments.
In this paper, fabrication tolerance of two mode-coupling-based polarization rotators, slanted-angle polarization rotator and asymmetric sidewall polarization rotator, is studied and compared based on BPM and three-dimensional FDTD simulations. Optimization on both structures has achieved over 20 dB polarization extinction ratio with short rotation length. The effects of variation on rotation length,...
A silicon waveguide based TE mode converter was designed for the mode conversion between a horizontal waveguide and vertical waveguide in the two-layer structure waveguide based polarization diversity circuit. The TE mode converter's performance was studied. The polarization mode converter with minimum length of 5μm was demonstrated to provide the TE mode conversion while maintaining the polarization...
A new PON configuration and novel silicon photonic transceiver architecture for ONU are proposed, eliminating the need for an internal laser source in ONU. The Si transceiver is fully monolithic and demonstrates low-cost high-volume manufacturability.
In order to improve the matching performance of the nMOSFET and pMOSFET threshold voltages in CMOS circuit, a novel p+ poly-SiGe gate CMOS device is described in this paper. With the change in work function and bandgap, the device effectively reduces the threshold voltage Vth of pMOSFET while the performance of nMOSFET is maintained. Moreover, the threshold voltage Vth of pMOSFET can be continuously...
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry/wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). In the terms of mesa SiGe HBT production, it is a key technology to control the etch of ultra-thin Si and SiGe film. When N+/N silicon in emitter region is etched, the length of etch time is critical. If etch...
Si based Ge quantum dot infrared photodetector (QDIP) has the potential of being a serious candidate for applications in optical fiber communications. In this paper, 20 periods of stacked Ge quantum dots were grown on Si(100) by gas source molecular beam epitaxy (GSMBE). Using the stacked quantum dots as active region, a P-I-N structure quantum dot infrared photodetector was fabricated. To improve...
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