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We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.
Co-ferrite with spinel structure is one of the attractive materials for spintronics and artificial multi-ferroics. Due to the insulating and high-curie temperature properties, Co-ferrite thins films have potential applications in such so called spin filters, where a combination of insulating ferrite with a non-magnetic electrode is believed capable of creating pure spin polarized currents [1]. Co-ferrite...
We report guidelines for symmetric threshold voltage (Vth) in double gate (DG) tunnel FinFETs (tFinFETs) with single and dual metal gate electrodes. To realize the symmetric Vth=±0.2V, the work function difference (ΔΦm) of each gate electrode in n- and p-type tFinFETs with a nondoped Si channel must be 1.34 eV, indicating that tuning the effective work functions in the dual metal gates is difficult...
Two-tiered wireless sensor networks offer good scalability, efficient power usage, and space saving. However, storage nodes are more attractive to attackers than sensors because they store sensor collected data and processing sink issued queries. A compromised storage node not only reveals sensor collected data, but also may reply incomplete or wrong query results. In this paper, we propose QuerySec,...
Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 μm.
The threshold voltage (Vt) in scaled poly-Si channel FinFETs and tri-gate flash memories with poly-Si floating gate (FG) was systematically compared with crystal channel ones, for the first time. It was found that some superior Id-Vg characteristics are observed in the scaled poly-Si channel FinFETs with gate length (Lg) down to 54 nm or less. The standard deviation of Vt (σVt) of poly-Si channel...
Many fibre-optic telecommunications systems exploit the spectral ‘window’ at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits...
Studying thin film thermal conduction is important in the development of many heat related sensors, actuators and microsystems. Emerging non-contact metrologies of membrane thermal conductivity show several advantages when devices are scaling down or novel materials are utilized. In this paper, a method to evaluate membrane thermal conductivity is presented using quantum dots as temperature markers...
The Vt variability in scaled FinFETs with gate length (Lg) down to 25 nm was systematically investigated, for the first time. By investigating the gate oxide thickness (Tox) dependence of Vt variation (VTV), the gate-stack origin, i.e., work-function variation (WFV) and gate oxide charge (Qox) variation (OCV) origin VTV were successfully separated. It was found that the atomically flat Si-fin sidewall...
We present the integration of super long horizontally aligned single-walled carbon nanotubes (SWNTs) on the micromachined wide trenches for infrared (IR) sensor application. The HA-SWNTs were found to be able to grow across trenches as wide as 1000 mum forming parallel SWNT bridges on the trench. The sensor fabricated with only one process shows sharp and remarkable responses to the ~ 4 mW IR radiations...
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