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Solitons are well known solutions of the nonlinear Schrödinger equation (NLSE). In optics, temporal solitons are localized wavepackets that travel unperturbed in dispersive Kerr media. They can be of different order, with only first order solitons strictly maintain their shape as they propagate, while higher order solitons periodically oscillate along the waveguide. If the propagation deviates from...
We present an on-chip III–V-on-silicon mode-locked laser at 1.6 µm with a 1 GHz repetition rate and −6 dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding pulses showed an autocorrelation trace FWHM of 11 ps. A high purity RF spectrum was measured.
We review the integration of III–V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and short-wave infrared spectroscopic sensors.
Chip scale terahertz dielectric waveguides, consisting out of high resistivity silicon as a core material have been fabricated. The waveguide loss is measured to be ∼1dB/cm at both 1 THz and 2.5 THz.
In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5–5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors...
Supercontinuum generation in CMOS compatible hydrogenated amorphous silicon waveguides with femtosecond pulses at telecommunication wavelengths is experimentally studied. It is shown that stable 540 nm broad supercontinua can be obtained in 1 cm-long waveguides.
A mid-infrared silicon nanophotonic integrated circuit platform can have broad impact upon environmental monitoring, personalized healthcare, and public safety applications. Development of various mid-IR components, including optical parametric amplifiers, sources, modulators, and detectors, is reviewed.
Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 μm.
We present a miniature spectrometer fabricated on a Silicon-on-Insulator substrate with center wavelength at 2.15 μm. The spectrometer is a planar concave grating (PCG) with 6 channels and 4 nm channel spacing with a crosstalk of −12 dB. We investigate heterogeneously integrated grating-assisted GaInAsSb photodiodes for future implementation as detector array.
Microring resonators on SOI are investigated for both orthogonal polarizations. By demonstrating low-loss (1.94dB/cm) microring resonators with an intrinsic Q up to 340000 we proof that using TM-polarized light enables high-performance filters.
We demonstrate parametric conversion with simultaneous 19.5 dB amplification, of a mid-IR 2440 nm signal to the telecom-band near 1620 nm, using silicon nanophotonic wires. Conversion over 820 nm is facilitated using higher-order waveguide dispersion.
We propose using a hydrogenated amorphous silicon waveguide for ultra-high-speed serial data waveform sampling. 320 Gbit/s serial optical data sampling is experimentally demonstrated with +12 dB intrinsic four wave mixing conversion efficiency.
We study self phase modulation in submicron amorphous silicon-on-insulator waveguides. We extract both the real and imaginary part of the nonlinear parameter γ from a 1 cm long waveguide with a cross-section of 500×220nm2. The real and imaginary part of the nonlinear parameter are found to be 767W-1m-1 and -28W-1m-1 respectively. The figure of merit (FOM) is found to be 3.6 times larger than the FOM...
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