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High-voltage (HV) metal-oxide-semiconductor field-effect transistors (MOSFETs) of the laterally diffused metal-oxide-semiconductor (LDMOS) type enable applications over a wide range of bias voltages by optimizing the combined structure of MOSFET and drift region at its drain side. We report a physically accurate compact resistor model of the LDMOS drift region, adapted to the special requirements...
The compact SOI-MOSFET model HiSIM-SOI based on the complete surface-potential description is presented. The model considers all possible charges induced in the device for the formulation of the Poisson equation, which is solved iteratively. Thus HiSIM-SOI is valid for any structural variations from thick to extremely thin SOI or BOX layers. The dynamic depletion between the fully and partially depleted...
High-voltage MOSFETs enable wide bias-range applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the...
We have analyzed the self-heating effect in high-voltage (HV) MOSFETs, and have found that the self-heating effect first becomes larger with increasing gate-source voltage Vgs due to the current-density increase. However, it then starts to get smaller again with further increased Vgs. The reason is the spatial energy dissipation accompanied with the carrier injection into the resistive drift region...
We analyze the carrier dynamics in MOSFETs under low voltage operation for a 90 nm CMOS technology. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering...
A consistent non-quasi-static MOSFET model for time-domain and frequency-domain circuit simulation is developed. The model takes into account the time delay for carriers to form the channel, which is neglected in conventional quasi-static models. The model, as implemented into the surface-potential-based MOSFET model HiSIM, is verified to calculate correct Y-parameters in the frequency domain. The...
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