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A novel method of graded junction termination extension (JTE) formation for high-voltage 4H-SiC power devices is presented. Unlike conventional multiimplantation or tapered thickness mask approaches utilizing several photolithography steps, the new termination technique utilizes a single mask with window areas varied laterally away from the main junction, a single-step boron implantation, and drive-in...
For the first time, the integration of 1200V SiC BJT with two types of SiC diode, PiN and MPS diode is designed, fabricated and characterized. Compared with the discrete anti-parallel diode, the integration solution will reduce the cost, size and packaging parasitic. The static characteristics show competitive BJT and diode performance in the integrated device as compared to discrete devices. The...
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