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A fluxless process of bonding silicon to Ag-cladded copper using electroplated In-Ag multilayer structure is developed. The Ag cladding on the copper substrate is a stress buffer to deal with the large mismatch in coefficient of thermal expansion (CTE) between semiconductors such as Si (3 ppm/degC) and Cu (17 ppm/degC). To manufacture Ag on copper substrate, two techniques are developed. The first...
New fluxless hermetic sealing technique is reported using electroplated Sn-rich soft solder. Specific type of glass (SCG72) is chosen as a lid material to be sealed onto the alumina ceramic package to deal with thermal expansion mismatch. This glass has nominal coefficient of thermal expansion of 7ppm/degC, which is almost perfectly matching to that of alumina ceramic package. Thick Sn layer is plated...
Large 6 mm times 9 mm silicon dice have been successfully bonded on alumina substrate with electroplated Au80Sn20 eutectic alloy. Eutectic AuSn is one of the best known hard solders having excellent fatigue-resistance and mechanical properties. A fluxless bonding process in 50 militorrs of vacuum environment is presented. Vacuum environment is employed to prevent tin oxidation during the process....
A fluxless bonding process between silicon and copper with high-temperature Ag-Sn joint is developed by low temperature bonding using Ag-Sn-Au multilayer composite structure. The copper substrate is plated with a thick silver layer as stress buffer. We bond 5mmtimes5mm silicon chips onto Ag/copper substrates using electroplated lead-free Ag-Sn-Au solder. Si chips were produced with two different kinds...
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