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SF6 is widely used in the high-voltage field as its excellent insulation performance. but now, the application of SF6 is limited to use more and more because it makes the greenhouse effect. So how to find out some gas to instead of it and how to reduce its using has become a hot issue. In this paper, the characteristics of SF6/N2 gas mixtures are investigated. considering C-GIS structural features,...
We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn...
In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
We annealed hydrothermal-grown ZnO nanorods in oxygen and reducing environment (foaming gas) at 450°C and investigated its effect on the performance of dye-sensitized solar cells. The changes in morphology and surface damage due to annealing were not spotted. From photoluminescence and X-ray diffraction spectra, we observed that visible emission related to defect states, especially yellow-green emission...
In this paper we present the design, fabrication and test of a MEMS resonator including a field emission gauge for the measurement of the resonator movements. The device is made of an in plane vibrating structure containing electrostatic actuation electrodes as well as a dual tip field emission structure. One tip is fixed where the other, standing about one micron in front of it, is attached to the...
We present a micromechanical device designed to be used as a non-volatile mechanical memory. The structure is composed of a suspended slender nanowire (width: 100 nm, thickness: 430 nm, length: 8 to 30 mum) clamped at both ends. Electrodes are placed on each side of the nanowire to 1) actuate the structure during the data writing and erasing mode and 2) determine its position by measuring the capacitive...
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