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In this paper, we measured four-level Random Telegraph Noise (RTN) in Gate Induced Drain Leakage (GIDL) current of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Using RTN measurement data, we extracted fundamental parameters of each trap, such as the trap depth (xT) and energy level (ECox-ET). To correctly interpret capture and emission process, capture cross section (σc) of the traps...
In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
The random telegraph noise in a gate leakage current in an accumulation mode has been studied to characterize slow oxide traps at nMOSFET devices having a TiN/HfO2/SiO2 gate stack. New equations for the trap's vertical location and energy level were derived by means of the relation between the trap's energy and Fermi levels in the accumulation mode. Through our analysis in both the accumulation and...
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