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In conventional SiP (System in Package), several semiconductor chips had been 2D arranged in an interposer and a mother board. However, it is difficult to downsize and improve the performance of electronic devices due to that large area is occupied by the chips. Recently, 3D packaging technology has been investigated to reduce size of devices and to improve performance of semiconductor devices [1-11]...
Recently, the downsizing and high-performing semiconductor packages have been developed and 3D packaging has been spurred research into reliability of TSV (through silicon via) [l]-[9]. In conventional SiP (System in Package), several semiconductor chips had been arranged in a plate. It is difficult to correspond to downsizing and high-performing of electronic devices because that large area is occupied...
Thermal stresses around void in TSV (Through Silicon Via) structure in 3D SiP were discussed under the conditions of device operation and reflow process by using FEM (Finite Element Method). In case of the condition of device operation, equivalent stress around void inside Cu TSV was estimated at around 100 MPa. It showed the low possibility for low cycle fatigue of Cu TSV under device operation because...
The stresses of TSV (Through Silicon Via) and Si chips in 3D-SiP were discussed with a large scale simulator based on FEM (Finite Element Method), ADVENTURECluster. In this study, the stacked layer structure of Si chips is modeled accurately. Thermal stress simulation for TSV structure in Si chips is carried out under thermal loads due to device operation and reflow process. In case of device operation,...
In this study, the required heat transfer coefficient of heat sink is quantitatively shown by steady heat conduction simulation. Maximum principal stress of silicon and equivalent stress of the TSV are obtained from thermal stress simulation.
The relation between maximum temperature in Si chip and varied heat transfer coefficients of heat sink is shown in Fig. 5. Maximum temperature for device operation was assumed to be 85 °C. Heat transfer coefficient of heat sink at device operation is estimated to be 4.5W/m2K by quadratic approximation of least square method. Maximum temperature of 3D SiP was almost 85 °C and uniform temperature distribution.
The thermo-mechanical reliability of stacked die structures is a critical issue in 3D packaging. The assessment of the stress and the warpage of silicon dies in 3D stacked structures become important in achieving low-stress and low-warpage 3D packaging. However the parametric analyses of thermal stress and die-warpage by rigorous finite element analysis can be time consuming for 3D systems, since...
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