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In conventional SiP (System in Package), several semiconductor chips had been 2D arranged in an interposer and a mother board. However, it is difficult to downsize and improve the performance of electronic devices due to that large area is occupied by the chips. Recently, 3D packaging technology has been investigated to reduce size of devices and to improve performance of semiconductor devices [1-11]...
Recently, the downsizing and high-performing semiconductor packages have been developed and 3D packaging has been spurred research into reliability of TSV (through silicon via) [l]-[9]. In conventional SiP (System in Package), several semiconductor chips had been arranged in a plate. It is difficult to correspond to downsizing and high-performing of electronic devices because that large area is occupied...
Thermal stresses around void in TSV (Through Silicon Via) structure in 3D SiP were discussed under the conditions of device operation and reflow process by using FEM (Finite Element Method). In case of the condition of device operation, equivalent stress around void inside Cu TSV was estimated at around 100 MPa. It showed the low possibility for low cycle fatigue of Cu TSV under device operation because...
The stresses of TSV (Through Silicon Via) and Si chips in 3D-SiP were discussed with a large scale simulator based on FEM (Finite Element Method), ADVENTURECluster. In this study, the stacked layer structure of Si chips is modeled accurately. Thermal stress simulation for TSV structure in Si chips is carried out under thermal loads due to device operation and reflow process. In case of device operation,...
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