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In this work a linear field model is adopted to study the reliability of capacitors which are manufacturing in Win's production line. Two testing techniques, a constant voltage and a ramped voltage testing modes, are compared in order to examine in various sizes and shapes which testing techniques may give us a better way to predict the capacitor lifetime. It seems to us that the constant voltage...
<para> Hot-carrier-induced device degradation in n-type high-voltage drain-extended MOS (DEMOS) devices stressed under high drain voltage and high gate voltage is investigated. Charge pumping data and technology computer-aided-design simulation results reveal that hot-carrier-induced interface state formation in the gate overlapped shallow trench isolation region is responsible for device...
We present in this paper an Arrhenius-based method of assessing MTTF as applied to one of our own products. This undertaking was motivated by a sudden mechanical change to a product nearing shipment that raised its internal operating temperature 10degC. As the time available precluded any retesting, we undertook this analysis in lieu of a full requalification to show that MTTF would not be compromised...
A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25 mum optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25 mum Ka- and Ku-version pHEMT devices demonstrate state-of-the-art power performance at 29 and 10 GHz, respectively. Excellent reliability has been achieved at channel temperature exceeding 275degC. Yield...
A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this dasiadynamic resistancepsila (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective...
The study of low-k TDDB line space scaling is important for assuring robust reliability for new technologies. Although spacing effects due to line edge roughness (LER) on low-k TDDB lifetime were reported previously (Chen et al., 2007; Lloyd et al., 2007; Kim et al., 2007), there has been a lack of an analytical model with which to link line edge roughness to experimental TDDB data in a simple quantitative...
Low-k time-dependent dielectric breakdown (TDDB) is rapidly becoming one of the most important reliability issues in Cu/low-k technology development and qualification. Although considerable progress has been made in recent years in addressing the electric field dependence of low-k time-to-breakdown (tBD), there has been very little comprehensive work done on the effect of metal area and line spacing...
During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challenges. In this paper, a comprehensive reliability evaluation for...
In the course of Cu/low-k technology development and qualification, low-k time-dependent dielectric breakdown (TDDB) is rapidly becoming one of the most important reliability issues. In order to accurately predict low-k TDDB reliability, it is crucial to clarify the electric field dependence and temperature dependence of time-to-breakdown. In this study, bias-temperature stresses of CVD low-k SiCOH...
Integration of low-cost and high performance passive capacitors into existing silicon CMOS technologies is essential for analog and radio frequency (RF) IC applications. Recently, BEOL vertical natural capacitors (VNCAP) with stacked via-comb structures have emerged as an attractive option due to their low-cost, high density, and highly symmetric configurations. In order to accurately predict low-k...
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