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This chapter suggests a foundation for simulation operations specialist (SOS) professional development for individuals interested in creating a new, value‐added, healthcare profession fit for the next generation of simulation operations. This evolving profession must provide healthcare performance improvement capabilities using simulation and simulation technologies as part of the larger healthcare...
This paper presents a new field-plated p-channel extended drain (FP EDPMOS) device in which the drain is depleted by the combination of a surface field plate and buried silicon junction(s). The breakdown voltage is layout scalable from 35 V to over 80 V, achieving a best-in-class Rsp-BVds figure-of-merit of 1.10 mOhm cm2 for 70 V BVds. Super-linear output characteristics and full forward safe operating...
This paper presents a process in which a 55 V-class of power devices is added to baseline 0.25 um 2.5 V/5 V/ 20 V CMOS technology by forming asymmetric extended-drain device structures in which an inverted well design concept is utilized to form an extended-drain dielectric region. The RsP-BVdS figure-of-merit is consistent with best-in-class (0.65 mOhm cm2 / 70 V NMOS, 1.60 mOhm cm2 / 70 V PMOS),...
With increasing Tevatron luminosity, efficient triggers that meet the bandwidth limitations of the experiment's data acquisition system become more and more difficult to construct. To meet these challenges, the DOslash experiment has significantly enhanced its triggering capabilities. A major component of this upgrade is a completely re-designed Level-1 calorimeter trigger (L1Cal). This new system...
This paper presents a process flow in which a 20V-class of power devices is added to baseline 0.25mum CMOS technology by forming asymmetric extended-drain device structures in which shallow-trench-isolation (STI) is incorporated within the device unit cell, forming a gate extended-drain dielectric region. The Rsp-BVds figure-of-merit is consistent with best-in-class for this device construction (0...
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