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With technology scaling towards 14nm and beyond, it becomes extremely difficult for conventional planar Field Effect Transistors (FETs) to suppress a short channel effect (SCE). FinFET technology is a promising candidate for further generation to overcome those issues. The gate of a FinFET wraps around the channel without heavy doping offers an improved electrostatic control to yield a tighter distribution...
We have fabricated Al-doped ZnO thin-film transistors (AZO TFT) on plastic substrate at room temperature. The effect of O2/Ar ratio during channel deposition is investigated on the electrical properties of the Al-doped ZnO thin-film transistors (TFTs) on plastic substrates at room temperature. As the O2/Ar ratio increases, the threshold voltage increases monotonously while the saturation mobility...
A high-voltage lateral double diffused metal-oxide-semiconductor transistor on partial silicon on insulator (PSOI) with a buried low-k dielectric (LK PSOI) is proposed. The low-k value enhances the electric field strength in the dielectric (EI). The Si window not only makes the substrate share the breakdown voltage (BV) and modulates the field distribution in the SOI layer but also alleviates the...
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