The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The ideality factor of a 2 μm InGaSb/AlGaAsSb quantum well laser is investigated. The total ideality factor comes mainly from the central p-n junction and two metal-semiconductor junctions. It decreases from 4.0 to 3.3 when the temperature is increased from 20 to 80 oC.
A limiting factor of GaAs Schottky diodes used as mixers in heterodyne receivers is their high intrinsic noise when compared to SIS or HEB devices. This work presents results on the numerical optimization of fundamental Schottky diode mixers, results which predict a significant improvement in the noise performance of current Schottky mixer technology in the THz band. The optimization of the Schottky...
The hybrid structures of a strong spin-orbit coupling (SOC) metal such as Pt and a magnetic insulator such as yttrium iron garnet (YIG) exhibit a variety of interesting spin current related phenomenon such as spin pumping, spin Seebeck effect, and spin Hall magnetoresistance (SMR) [1–2].
This study sets out to explore the space charge characteristics of high voltage direct current (HVDC) cable grade crosslinked polyethylene (XLPE) using different electrode materials and configurations, ranging from sputtered gold to thermally bonded semi-conducting materials. The existence of both homo and hetero charges in HVDC cables is well known; however, the role of semi-conducting materials...
We report on the design, fabrication and characterization of a Schottky diode frequency tripler to 280 GHz. The narrowband multiplier features six GaAs Schottky planar diodes in a balanced configuration. Measured room temperature conversion efficiencies are in the range 1 to 5 % across the band 240–290 GHz for 100 mW of input power. The corresponding 3 dB bandwidth is 6 % centred at 280 GHz. When...
Mismatch of analog circuits designed for mobile devices are studied with nanoprobing, pattern density, and inline monitoring using a 28LP SoC technology. Active layer density was found to be the root cause of high mismatch variation. Design guidelines, along with an interleaved design, are shown to improve mismatch for a given process flow.
This paper introduces a real field mission profile oriented design tool for the new generation of grid connected PV-inverters applications based on SiC-devices. The proposed design tool consists of a grid connected PV-inverter model, an ElectroThermal model, a converter safe operating area (SOA) model, a mission profile model and an the evaluation block. The PV-system model involves a three level...
Temperature (20–100 °C) and excitation power (10–700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared...
This abstract describes room temperature ozone sensing using a ZnO based film bulk acoustic resonator (FBAR). The resonant frequency of the FBAR decreased upon ozone exposure due to the density increase of the ZnO film. Ozone can be adsorbed on the ZnO surface by capturing free electrons from the film, which increases the film density. The minimum detectable concentration is 21 ppb (parts per billion)...
Health and usage monitoring (HUMS) as a technique for online test, diagnosis or prognosis of structures and systems has evolved as a key technology for future critical systems. The application of HUMS technology requires a portfolio of reliable miniaturized sensors, capable of delivering "intelligence" on the internal and external environment of a system or structure. This paper proposes...
Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
Temperature-dependent electroluminescence efficiency of blue light-emitting diodes with different well widths is investigated. The efficiency droop phenomenon for LEDs at low temperature is dependent with electron overflow and non-uniform hole distribution within MQW region.
Recent studies on 1.3 mum InGaAs/GaAs QD-SOAs show they are able to deliver >18 dB gain across a 20 to 70degC temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.
This paper describes the design and implementation of a prototype 30kW, 200kHz pulsed power supply. A power density greater than 100W/inch3 is achieved with the converter operating at a high ambient temperature of 65 ??C, by utilizing various technologies on topology, control, devices, passives, and thermal management, which can help reduce the converter size. The experimental results demonstrate...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.