Search results for: Shu‐Han Chen

Items from 1 to 20 out of 33 results

article

Chitosan/Polyvinyl Alcohol/ Lauramidopropyl Betaine/2D‐HOF Mixed Film with Abundant Hydrogen Bonds Acts as High Mechanical Strength Artificial Skin

Qin Ye, Shu‐Han Chen, Ya Zhang, Bo Ruan, more

Macromolecular Bioscience > 21 > 12 > n/a - n/a

The mechanical properties of artificial skins are complicated to maintain under ensuring air permeability and antimicrobial. Thus, a series of hydrophilic antimicrobial polymer networks are prepared by crosslinking chitosan and polyvinyl alcohol with the lauramidopropyl betaine and hydrogen bond organic framework (CS/PVA/LPB/2D‐HOF). The mechanical performance of the control groups and the complex...

article

Enhancement of biodiesel production by cultivating Dipodascaceae moderated-filamentous granular sludge with sugar-containing wastewater

Mei-xi Li, An-jie Li, Qu Sun, Xiao-man Jiang, more

International Biodeterioration & Biodegradation > 2016 > 110 > C > 38-45

Utilizing excess sludge from a wastewater treatment plant to produce biodiesel has become an increasingly popular topic. However, the low lipid content in activated sludge has hindered the application of biodiesel production from excess sludge. This study was designed to enhance biodiesel production from granular sludge fed with synthetic sugar-containing wastewater. Granules cultivated at different...

chapter

InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate

Xiao Gong, Qian Zhou, Man Hon Samuel Owen, Xin Xu, more

2014 IEEE International Electron Devices Meeting > 9.4.1 - 9.4.4

2014 IEEE International Electron Devices Meeting (IEDM)

InAlP-capped Ge nFETs with sub-400 °C process modules were reported. Ge nFETs on Ge substrates with InAlP/Al₂O₃/HfO₂ as gate dielectrics demonstrate the highest reported Ge (100) peak μ_eff for inversion mode devices. In addition, the gate stack with HfO₂ directly deposited on the InAlP cap was implemented in Ge nFETs on 300 mm Si substrates for the first time. This leads to the realization of long-channel...

chapter

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

Bin Liu, Xiao Gong, Ran Cheng, Pengfei Guo, more

2013 IEEE International Electron Devices Meeting > 26.7.1 - 26.7.3

2013 IEEE International Electron Devices Meeting (IEDM)

We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respectively. The InAlP cap reduces scattering due to high-K/InAlP interface traps and boosts carrier mobility. As a result, a record high electron mobility...

article

Morphology evolution of glancing angle deposition Ag films on nanosphere-array substrates: Kinetic Monte Carlo simulation

Jing-Shu Liang, Shu-Han Chen, En-Yu Lin, Di-Fan Luo, more

Computational Materials Science > 2013 > 79 > Complete > 31-35

The mechanism of Ag film growing processes by glancing angle deposition on various substrates is investigated via a three-dimensional kinetic Monte Carlo technique. From the morphology evolution of the film structures, three stages of the columnar growth on a close-packed spherical seed layer are demonstrated. At the initial stage, the Ag film is enforced to grow in periodically aligned columns instead...

article

3‐Nitro‐2H‐chromenes as a New Class of Inhibitors against Thioredoxin Reductase and Proliferation of Cancer Cells

Guo‐Qiang Xiao, Bao‐Xia Liang, Shu‐Han Chen, Tian‐Miao Ou, more

Archiv der Pharmazie > 345 > 10 > 767 - 770

A series of 3‐nitrochromenes were designed and synthesized. These compounds showed good inhibitory activity against thioredoxin reductase (TrxR) and the proliferation of A549 cancer cells. The structure–activity relationship analysis indicates that the 3‐nitrochromene scaffold is the crucial pharmacophore for achieving good inhibitory activity. The bromo‐substitutions at the 6‐ and 8‐position of 3‐nitrochromene...

article

Design, synthesis, and biological evaluation of curcumin analogues as multifunctional agents for the treatment of Alzheimer’s disease

Shang-Ying Chen, Yuan Chen, Yan-Ping Li, Shu-Han Chen, more

Bioorganic & Medicinal Chemistry > 2011 > 19 > 18 > 5596-5604

A series of novel curcumin analogues were designed, synthesized, and evaluated as potential multifunctional agents for the treatment of AD. The in vitro studies showed that these compounds had better inhibitory properties against Aβ aggregation than curcumin. Superior anti-oxidant properties (better than the reference compound Trolox) of these compounds were observed by the oxygen radical absorbance...

article

Inhibition of Cell Proliferation by Quindoline Derivative (SYUIQ-05) through its Preferential Interaction with c - myc Promoter G-Quadruplex

Tian-Miao Ou, Jing Lin, Yu-Jing Lu, Jin-Qiang Hou, more

Journal of Medicinal Chemistry > 2011 > 54 > 16 > 5671 - 5679

article

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

Chi-Che Tseng, Wei-Hsun Lin, Shung-Yi Wu, Shu-Han Chen, more

Journal of Crystal Growth > 2011 > 323 > 1 > 466-469

The light-emitting diode (LED) with a single GaSb QD layer embedded in a GaAs n–i–p structure operated under different injection currents and temperatures is investigated. With increase in injection currents, room-temperature electroluminescence (EL) peak blue shift is observed until a saturation of EL intensity is reached. In the temperature-varying EL measurements, with increase in temperatures,...

article

The kinetic process of non-smooth substrate thin film growth via parallel Monte Carlo method

Zi-Yi Chen, Yuan Zhu, Shu-Han Chen, Zhi-Ren Qiu, more

Applied Surface Science > 2011 > 257 > 14 > 6102-6106

A Monte Carlo simulation model of thin film growth based on parallel algorithm is presented. Non-smooth substrate with special defect mode is introduced in such a model. The method of regionalizing is used to divide the substrate into sub-regions. This method is supposed to be modulated according to the defect mode. The effects of surface defect mode and substrate temperature, such as the nucleation...

article

Syntheses and characterization of nimesulide derivatives for dual enzyme inhibitors of both cyclooxygenase-1/2 and 5-lipoxygenase

Yue Li, Shu-Han Chen, Tian-Miao Ou, Jia-Heng Tan, more

Bioorganic & Medicinal Chemistry > 2011 > 19 > 6 > 2074-2083

Cyclooxygenase-1/2 (COX-1/2) and 5-lipoxygenase (5-LOX) are enzymes in two different pathways in the inflammatory process. In the present study, a variety of new nimesulide derivatives were synthesized through incorporation of a 5-LOX pharmacophore into nimesulide followed with some structural modifications, which were then characterized for dual enzyme inhibitors for these two types of enzymes. Their...

article

Influence of as on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots

Chi-Che Tseng, Shu-Cheng Mai, Wei-Hsun Lin, Shung-Yi Wu, more

IEEE Journal of Quantum Electronics > 2011 > 47 > 3 > 335 - 339

The influence of As atoms on the morphologies of GaSb quantum dots (QDs) is investigated. Without any special treatment, GaSb quantum rings (QRs) are observed in the embedded GaSb layer even when the uncapped layer reveals QD like morphologies. With intentional As supply after the uncapped GaSb QD deposition, a QD to QR transition is observed. The phenomenon suggests that insufficient Sb atoms on...

chapter

Weak emitter-size effect in InP/In_0.37Ga_0.63As_0.89Sb_0.11/In_0.53Ga_0.47As double heterojunction bipolar transistors

Che-An Chang, Shu-Han Chen, Sheng-Yu Wang, Chao-Min Chang, more

IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials > 1 - 4

2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (J_C) due to their low surface recombination. The deduced emitter periphery surface recombination current (K_B,surf) of type-I InP/In_0.37Ga_0.63As_0.89Sb_0.11 HBTs is 1.57×10⁻⁵ µA/μm at J_C = 0.1 A/cm², which is twenty times lower than that of the conventional InP/InGaAs SHBTs...

chapter

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Chi-Che Tseng, Shih-Yen Lin, Wei-Hsun Lin, Shu-Cheng Mai, more

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) > 1 - 3

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)

A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blue shift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs hetero-structures. Significant electroluminescence is observed for the device under forward biases, which suggests that pronounced dipole transitions...

chapter

Characterization of InAlAs/In_0.25Ga_0.75As_0.72Sb_0.28/InGaAs double heterojunction bipolar transistors

Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) > 1 - 4

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)

We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In_0.25Ga_0.75As₀₇₂Sb_0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×10¹⁹ cm^-3) base is used, suggesting a long minority...

article

DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

Shu-Han Chen, Chao-Min Chang, Pei-Yi Chiang, Sheng-Yu Wang, more

IEEE Transactions on Electron Devices > 2010 > 57 > 12 > 3327 - 3332

DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current,...

article

In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation

Tung-Hsun Chung, Shu-Han Chen, Wen-Hsuan Liao, Shih-Yen Lin

IEEE Electron Device Letters > 2010 > 31 > 11 > 1227 - 1229

An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has...

article

Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

Sheng-Yu Wang, Pei-Yi Chiang, Chao-Min Chang, Shu-Han Chen, more

IEEE Electron Device Letters > 2010 > 31 > 12 > 1401 - 1403

The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density $(K_{\rm SURF})$ than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer...

article

Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters

Yu-Tai Li, Jin-Wei Shi, C.-Y. Huang, Nan-Wei Chen, more

IEEE Journal of Quantum Electronics > 2010 > 46 > 1 > 19 - 27

We describe in detail the characterization of two high-power photonic transmitters based on two different kinds of high-power photodiodes, one a GaAs/AlGaAs based uni-traveling-carrier photodiode (UTC-PD) and the other a separated- transport-recombination photodiode (STR-PD). The diodes operate under optical pulse excitation at the 800 nm wavelength. Both PDs have the same total depletion layer thickness...

chapter

Metal-oxide-HEMT on 6.1Å antimonides

Da-Wei Fan, Yu-Chao Lin, Heng-Kuang Lin, Pei-Chin Chiu, more

2009 IEEE International Conference on Indium Phosphide&Related Materials > 326 - 329

2009 IEEE International Conference on Indium Phosphide & Related Materials

We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al_1-xO_x was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a f_T of...

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GALLIUM ARSENIDE (12)
III-V SEMICONDUCTORS (12)
ALUMINIUM COMPOUNDS (8)
INDIUM COMPOUNDS (8)
HETEROJUNCTION BIPOLAR TRANSISTORS (7)
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HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS) (5)
JUNCTIONS (5)
GAIN (4)
LOGIC GATES (4)
MOLECULAR BEAM EPITAXIAL GROWTH (4)
CURRENT DENSITY (3)
DOPING (3)
INP (3)
OPTICAL TRANSMITTERS (3)
PHOTODIODES (3)
RESISTANCE (3)
(230.5160) PHOTODETECTORS (2)
(230.5170) PHOTODIODES (2)
ALUMINUM OXIDE (2)
DATA MODULATOR (2)
DC CHARACTERISTICS (2)
DIFFUSION (2)
ELECTROLUMINESCENCE (2)
GAAS-ALGAAS (2)
GAN (2)
GASB-GAAS (2)
GATE LEAKAGE (2)
HEMTS (2)
HIGH ELECTRON MOBILITY TRANSISTORS (2)
INALAS-INGAASSB-INGAAS (2)
INALAS/INGAASSB (2)
INAS-ALSB (2)
INP/INGAASSB (2)
ION IMPLANTATION (2)
LIGHT EMITTING DIODES (2)
MOLECULAR BEAM EPITAXY (MBE) (2)
PHOTOLUMINESCENCE (2)
PHOTONICS (2)
QUANTUM DOTS (2)
RARE EARTH (2)
SOLID-SOURCE MOLECULAR BEAM EPITAXY (2)
SUBMILLIMETER-WAVE (2)
TEMPERATURE 293 K TO 298 K (2)
TERAHERTZ (THZ) (2)
TRANSCONDUCTANCE (2)
TYPE-II (2)
3‐NITRO‐2H‐CHROMENE (1)
AG FILM GROWTH (1)
ANALYSIS (1)
ANTENNA MEASUREMENTS (1)
ANTI-ALZHEIMER AGENT (1)
ANTIMONY (1)
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INFONA - science communication portal

Search results for: Shu‐Han Chen

Chitosan/Polyvinyl Alcohol/ Lauramidopropyl Betaine/2D‐HOF Mixed Film with Abundant Hydrogen Bonds Acts as High Mechanical Strength Artificial Skin

Enhancement of biodiesel production by cultivating Dipodascaceae moderated-filamentous granular sludge with sugar-containing wastewater

InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

Morphology evolution of glancing angle deposition Ag films on nanosphere-array substrates: Kinetic Monte Carlo simulation

3‐Nitro‐2H‐chromenes as a New Class of Inhibitors against Thioredoxin Reductase and Proliferation of Cancer Cells

Design, synthesis, and biological evaluation of curcumin analogues as multifunctional agents for the treatment of Alzheimer’s disease

Inhibition of Cell Proliferation by Quindoline Derivative (SYUIQ-05) through its Preferential Interaction with c - myc Promoter G-Quadruplex

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

The kinetic process of non-smooth substrate thin film growth via parallel Monte Carlo method

Syntheses and characterization of nimesulide derivatives for dual enzyme inhibitors of both cyclooxygenase-1/2 and 5-lipoxygenase

Influence of as on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots

Weak emitter-size effect in InP/In_0.37Ga_0.63As_0.89Sb_0.11/In_0.53Ga_0.47As double heterojunction bipolar transistors

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Characterization of InAlAs/In_0.25Ga_0.75As_0.72Sb_0.28/InGaAs double heterojunction bipolar transistors

DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation

Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters

Metal-oxide-HEMT on 6.1Å antimonides

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